logo

RJP60F5DPM Renesas (https://www.renesas.com/) N-Channel IGBT

Description of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and application examples. You are fully responsible for the incorporation of these circuits, software, and information in the design of your equipment. Renesas Electronics assumes no responsibility for any losses incurred by you or third parties arising from...
Features
 Low collector to emitter saturation voltage VCE(sat) = 1.37 V typ. (IC = 40 A, VGE = 15 V, Ta = 25°C)
 Trench gate and thin wafer technology
 High speed switching R07DS0587EJ0100 Rev.1.00 Nov 25, 2011 Outline RENESAS Package code: PRSS0003ZA-A (Package name: TO-3PFM) C G 1. Gate 2. Collector 3. Emitter E 1 2 3 www.DataSheet.co.kr Absolute...

Datasheet PDF File RJP60F5DPM Datasheet - 141.97KB

RJP60F5DPM  






logo
Since 2006. D4U Semicon.   |   Contact Us   |   Privacy Policy   |   Site map