RJP30E3DPK-M0 mosfet equivalent, n-channel power mosfet.
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* Trench gate technology (G5H series) Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ High speed switching tf = 150 ns typ Low leak.
or use by the military, including but not limited to the development of weapons of mass destruction. Renesas Electronics.
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