Datasheet4U Logo Datasheet4U.com

RJH60D7DPQ-E0 - IGBT

Features

  • Short circuit withstand time (5 s typ. ).
  • Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 50 A, VGE = 15 V, Ta = 25°C).
  • Built in fast recovery diode (100 ns typ. ) in one package.
  • Trench gate and thin wafer technology.
  • High speed switching tf = 50 ns typ. (at VCC = 300 V, VGE = 15 V, IC = 50 A, Rg = 5 , Ta = 25°C, inductive load) R07DS0740EJ0100 Rev.1.00 Apr 19, 2012 Outline.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
RJH60D7DPK IGBT Renesas Technology
RJH60D0DPK Silicon N Channel IGBT Renesas Technology
RJH60D1DPE Silicon N Channel IGBT Renesas Technology
RJH60D1DPP-M0 Silicon N-Channel IGBT Renesas Technology
RJH60D2DPE Silicon N Channel IGBT Renesas Technology

Other Datasheets by Renesas

Part Number Description
RJH60D7DPM IGBT
RJH60D7ADPK IGBT
RJH60D7BDPQ-E0 IGBT
RJH60D0DPM IGBT
RJH60D0DPQ-A0 IGBT

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Preliminary Datasheet RJH60D7DPQ-E0 600V - 50A - IGBT Application: Inverter Features  Short circuit withstand time (5 s typ.)  Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 50 A, VGE = 15 V, Ta = 25°C)  Built in fast recovery diode (100 ns typ.) in one package  Trench gate and thin wafer technology  High speed switching tf = 50 ns typ. (at VCC = 300 V, VGE = 15 V, IC = 50 A, Rg = 5 , Ta = 25°C, inductive load) R07DS0740EJ0100 Rev.1.00 Apr 19, 2012 Outline RENESAS Package code: PRSS0003ZE-A (Package name: TO-247) C 4 G 1. Gate 2. Collector 3. Emitter 4. Collector E 1 2 3 www.DataSheet.
Published: |