RJH60D7DPM - IGBT

Features

Short circuit withstand time (5 s typ. ).
Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 50 A, VGE = 15 V, Ta = 25°C).
Built in fast recovery diode (100 ns typ. ) in one package.
Trench gate and thin wafer technology.
High speed switching tf = 50 ns typ. (at VCC = 300 V, VGE = 15 V, IC = 50 A, Rg = 5 , Ta = 25°C, inductive load) R07DS0176EJ0300 Rev.3.00 Apr 19, 2012 Outline.

Renesas

Datasheet Details

Part number	RJH60D7DPM
Manufacturer	Renesas
File Size	165.24 KB
Description	IGBT
Datasheet	RJH60D7DPM Datasheet
Additional preview pages of the RJH60D7DPM datasheet.

📁 Similar Datasheet

RJH60D7DPK - IGBT (Renesas Technology)
RJH60D0DPK - Silicon N Channel IGBT (Renesas Technology)
RJH60D1DPE - Silicon N Channel IGBT (Renesas Technology)
RJH60D1DPP-M0 - Silicon N-Channel IGBT (Renesas Technology)
RJH60D2DPE - Silicon N Channel IGBT (Renesas Technology)
RJH60D2DPP-M0 - Silicon N Channel IGBT (Renesas Technology)
RJH60D3DPE - Silicon N Channel IGBT (Renesas Technology)
RJH60D5DPK - Silicon N Channel IGBT (Renesas Technology)
RJH60D6DPK - Silicon N Channel IGBT (Renesas Technology)
RJH60C9DPD - Silicon N Channel IGBT (Renesas Technology)

Other Datasheets by Renesas

Full PDF Text Transcription

Click to expand full text

Preliminary Datasheet RJH60D7DPM 600V - 50A - IGBT Application: Inverter Features  Short circuit withstand time (5 s typ.)  Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 50 A, VGE = 15 V, Ta = 25°C)  Built in fast recovery diode (100 ns typ.) in one package  Trench gate and thin wafer technology  High speed switching tf = 50 ns typ. (at VCC = 300 V, VGE = 15 V, IC = 50 A, Rg = 5 , Ta = 25°C, inductive load) R07DS0176EJ0300 Rev.3.00 Apr 19, 2012 Outline RENESAS Package code: PRSS0003ZA-A (Package name: TO-3PFM) C G 1. Gate 2. Collector 3. Emitter E www.DataSheet.

Published: Jul 20, 2012 |