RJH60D7BDPQ-E0 - IGBT

Features

Short circuit withstand time (5 s typ. ).
Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 50 A, VGE = 15 V, Ta = 25°C).
Built in fast recovery diode (25 ns typ. ) in one package.
Trench gate and thin wafer technology.
High speed switching tf = 50 ns typ. (at VCC = 300 V, VGE = 15 V, IC = 50 A, Rg = 5 , Ta = 25°C, inductive load) Outline.

Renesas

Datasheet Details

Part number	RJH60D7BDPQ-E0
Manufacturer	Renesas
File Size	322.23 KB
Description	IGBT
Datasheet	RJH60D7BDPQ-E0 Datasheet
Additional preview pages of the RJH60D7BDPQ-E0 datasheet.

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Preliminary Datasheet RJH60D7BDPQ-E0 600V - 50A - IGBT Application: Inverter R07DS0795EJ0300 Rev.3.00 Jul 20, 2016 Features  Short circuit withstand time (5 s typ.)  Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 50 A, VGE = 15 V, Ta = 25°C)  Built in fast recovery diode (25 ns typ.) in one package  Trench gate and thin wafer technology  High speed switching tf = 50 ns typ. (at VCC = 300 V, VGE = 15 V, IC = 50 A, Rg = 5 , Ta = 25°C, inductive load) Outline RENESAS Package code: PRSS0003ZE-A (Package name: TO-247) C 4 123 1. Gate 2. Collector G 3. Emitter 4.

Published: Feb 12, 2017 |