RJH1CV6DPK datasheet, igbt equivalent, Renesas

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Features and benefits

* Short circuit withstand time (5 s typ.)
* Low collector to emitter saturation voltage VCE(sat) = 1.8 V typ. (at IC = 30 A, VGE = 15 V, Ta = 25°C)
* Built-i.

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RJH1CV6DPK

IGBT

Renesas

Manufacturer

Renesas (https://www.renesas.com/)

Related datasheet

RJH1CV6DPK Datasheet, Renesas

Features and benefits