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RJH1CD6DPQ-E0 Datasheet, Renesas

RJH1CD6DPQ-E0 igbt equivalent, igbt.

RJH1CD6DPQ-E0 Avg. rating / M : 1.0 rating-11

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RJH1CD6DPQ-E0 Datasheet

Features and benefits


* Short circuit withstand time (5 s typ.)
* Low collector to emitter saturation voltage VCE(sat) = 2.0 V typ. (at IC = 25 A, VGE = 15 V, Ta = 25°C)
* Built-i.

Application

or use by the military, including but not limited to the development of weapons of mass destruction. Renesas Electronics.

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RJH1CD6DPQ-E0
IGBT
RJH1CD6DPQ-A0
RJH1CD5DPQ-A0
RJH1CD5DPQ-E0
Renesas
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