RJH1CD7DPQ-E0 igbt equivalent, igbt.
* Short circuit withstand time (5 s typ.)
* Low collector to emitter saturation voltage VCE(sat) = 2.0 V typ. (at IC = 30 A, VGE = 15 V, Ta = 25°C)
* Built-i.
or use by the military, including but not limited to the development of weapons of mass destruction. Renesas Electronics.
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