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RJH1BF7RDPQ-80 Datasheet, Renesas

RJH1BF7RDPQ-80 switching equivalent, high speed power switching.

RJH1BF7RDPQ-80 Avg. rating / M : 1.0 rating-11

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RJH1BF7RDPQ-80 Datasheet

Features and benefits


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*
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* Voltage resonance circuit use Reverse conducting IGBT with monolithic body diode High efficiency device for induction heating Low collector to emi.

Application

or use by the military, including but not limited to the development of weapons of mass destruction. Renesas Electronics.

Image gallery

RJH1BF7RDPQ-80 Page 1 RJH1BF7RDPQ-80 Page 2 RJH1BF7RDPQ-80 Page 3

TAGS
RJH1BF7RDPQ-80
High
Speed
Power
Switching
RJH1BF6RDPQ-80
RJH1CD5DPQ-A0
RJH1CD5DPQ-E0
Renesas
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