R2J25953SP switching equivalent, h-bridge control high speed power switching.
* For Automotive application
* Built-in low on state resistance MOS FET.
(Pch: 16 m Max., Nch: 11 m Max.)
* Pch MOS FET is adopted on the high-side, and the.
The R2J25953 multi-chip module incorporates high-side Pch MOS FET, low-side Nch MOS FET, and Bi-CMOS driver in a single HSOP-36 package.
Features
* For Automotive application
* Built-in low on state resistance MOS FET.
(Pch: 16 m Max., Nch: .
Image gallery
TAGS
Manufacturer
Related datasheet
Download (Size : 174.31KB)