R2J20651ANP mosfet equivalent, mosfet.
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* Compliant with Intel 6 × 6 DrMOS specification Built-in power MOS FET suitable for app.
with 5 V/12 V input Built-in driver circuit which matches the power MOS FET Built-in tri-state input function which can .
The R2J20651ANP multi-chip module incorporates a high-side MOS FET, low-side MOS FET, and MOS-FET driver in a single QFN package. The on and off timing of the power MOS FET is optimized by the built-in driver, making this device suitable for large-cu.
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