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R2J25953 - H-Bridge Control High Speed Power Switching

Description

The R2J25953 multi-chip module incorporates high-side Pch MOS FET, low-side Nch MOS FET, and Bi-CMOS driver in a single HSOP-36 package.

Features

  • For Automotive.

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Datasheet Details

Part number R2J25953
Manufacturer Renesas Technology
File Size 169.75 KB
Description H-Bridge Control High Speed Power Switching
Datasheet download datasheet R2J25953 Datasheet
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Preliminary Datasheet R2J25953 H-Bridge Control High Speed Power Switching with Built-in Driver IC and Power MOS FET Description The R2J25953 multi-chip module incorporates high-side Pch MOS FET, low-side Nch MOS FET, and Bi-CMOS driver in a single HSOP-36 package. R07DS0044EJ0300 Rev.3.00 Sep 01, 2010 Features  For Automotive application  Built-in low on state resistance MOS FET. (Pch: 16 m Max., Nch: 11 m Max.)  Pch MOS FET is adopted on the high-side, and the charge pump noise was lost.  Built-in protection circuit of Thermal shut-down (TSD), Low Voltage Inhit (LVI), Overvoltage Detection (OVD) and Overcurrent Detection.  Built-in diagnostic function.  Built-in cross-conduction protection.
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