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R2J20602NP - Integrated Driver

Description

The R2J20602NP multi-chip module incorporates a high-side MOS FET, low-side MOS FET, and MOS-FET driver in a single QFN package.

The on and off timing of the power MOS FET is optimized by the built-in driver, making this device suitable for large-current buck converters.

Features

  • Built-in power MOS FET suitable for.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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R2J20602NP Integrated Driver – MOS FET (DrMOS) REJ03G1480-0300 Rev.3.00 Jun 30, 2008 Description The R2J20602NP multi-chip module incorporates a high-side MOS FET, low-side MOS FET, and MOS-FET driver in a single QFN package. The on and off timing of the power MOS FET is optimized by the built-in driver, making this device suitable for large-current buck converters. The chip also incorporates a high-side bootstrap Schottky barrier diode (SBD), eliminating the need for an external SBD for this purpose. Integrating a driver and both high-side and low-side power MOS FETs, the new device is also compliant with the package standard “Integrated Driver – MOS FET (DrMOS)” proposed by Intel Corporation.
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