R2J20602NP
Description
The R2J20602NP multi-chip module incorporates a high-side MOS FET, low-side MOS FET, and MOS-FET driver in a single QFN package. The on and off timing of the power MOS FET is optimized by the built-in driver, making this device suitable for large-current buck converters. The chip also incorporates a high-side bootstrap Schottky barrier diode (SBD), eliminating the need for an external SBD for this purpose. Integrating a driver and both high-side and low-side power MOS FETs, the new device is also pliant with the package standard “Integrated Driver
- MOS FET (Dr MOS)” proposed by Intel Corporation.
Features
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- - Built-in power MOS FET suitable for applications with 12 V input and low output voltage Built-in driver circuit which matches the power MOS FET Built-in tri-state input function which can support a number of PWM controllers VIN operating-voltage range: 16 V max High-frequency operation (above 1 MHz) possible Large average output current (Max. 40...
