logo

R1RW0416DSB-2SR Datasheet, Renesas

R1RW0416DSB-2SR sram equivalent, 4m high speed sram.

R1RW0416DSB-2SR Avg. rating / M : 1.0 rating-11

datasheet Download

R1RW0416DSB-2SR Datasheet

Features and benefits


* Single 3.3V supply: 3.3V ± 0.3V
* Access time: 10ns / 12ns (max)
* Completely static memory ⎯ No clock or timing strobe required
* Equal access and cycl.

Description

The R1RW0416D is a 4-Mbit high speed static RAM organized 256-kword × 16-bit. It has realized high speed access time by employing CMOS process (6-transistor memory cell) and high speed circuit designing technology. It is most appropriate for the appl.

Image gallery

R1RW0416DSB-2SR Page 1 R1RW0416DSB-2SR Page 2 R1RW0416DSB-2SR Page 3

TAGS

R1RW0416DSB-2SR
High
Speed
SRAM
R1RW0416DSB-2LR
R1RW0416DSB-2PR
R1RW0416DSB-0PR
Renesas

Since 2006. D4U Semicon.   |   Contact Us   |   Privacy Policy   |   Purchase of parts