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R1RW0404DGE-2LR Datasheet, Renesas

R1RW0404DGE-2LR sram equivalent, 4m high speed sram.

R1RW0404DGE-2LR Avg. rating / M : 1.0 rating-11

datasheet Download (Size : 167.89KB)

R1RW0404DGE-2LR Datasheet
R1RW0404DGE-2LR
Avg. rating / M : 1.0 rating-11

datasheet Download (Size : 167.89KB)

R1RW0404DGE-2LR Datasheet

Features and benefits


* Single supply: 3.3 V ± 0.3 V
* Access time: 12 ns (max)
* Completely static memory  No clock or timing strobe required
* Equal access and cycle times <.

Description

The R1RW0404D is a 4-Mbit high speed static RAM organized 1-Mword × 4-bit. It has realized high speed access time by employing CMOS process (6-transistor memory cell) and high speed circuit designing technology. It is most appropriate for the applica.

Image gallery

R1RW0404DGE-2LR Page 1 R1RW0404DGE-2LR Page 2 R1RW0404DGE-2LR Page 3

TAGS

R1RW0404DGE-2LR
High
Speed
SRAM
Renesas

Manufacturer


Renesas (https://www.renesas.com/)

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