R1RW0404DGE-2LR sram equivalent, 4m high speed sram.
* Single supply: 3.3 V ± 0.3 V
* Access time: 12 ns (max)
* Completely static memory No clock or timing strobe required
* Equal access and cycle times <.
The R1RW0404D is a 4-Mbit high speed static RAM organized 1-Mword × 4-bit. It has realized high speed access time by employing CMOS process (6-transistor memory cell) and high speed circuit designing technology. It is most appropriate for the applica.
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