R1RW0408DGE-2LR Overview
The R1RW0408D is a 4-Mbit high speed static RAM organized 512-kword × 8-bit. It has realized high speed access time by employing CMOS process (6-transistor memory cell) and high speed circuit designing technology. It is most appropriate for the application which requires high speed, high density memory and wide bit width configuration, such as cache and buffer memory in system.
R1RW0408DGE-2LR Key Features
- Single 3.3V supply: 3.3V ± 0.3V
- Access time: 12ns (max)
- pletely static memory
- Equal access and cycle times
- Directly TTL patible
- Operating current: 100mA (max)
- TTL standby current: 40mA (max)
- CMOS standby current : 5mA (max)
- Data retention current : 0.4mA (max) (L-version)
- Data retention voltage: 2.0V (min) (L-version)