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R1RW0408DGE-2LR - 4M High Speed SRAM

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Renesas

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R1RW0408DGE-2LR 4M High Speed SRAM by Renesas - Datasheet Preview — Datasheet preview – R1RW0408DGE-2LR

Datasheet Details

Part number	R1RW0408DGE-2LR
Manufacturer	Renesas
File Size	400.24 KB
Description	4M High Speed SRAM
Datasheet	R1RW0408DGE-2LR Datasheet
Note	This datasheet PDF includes multiple part numbers: R1RW0408DGE-2LR, R1RW0408D. Please refer to the document for exact specifications by model.
Additional preview pages of the R1RW0408DGE-2LR datasheet.

Product details

Description

The R1RW0408D is a 4-Mbit high speed static RAM organized 512-kword × 8-bit.

Features

Single 3.3V supply: 3.3V ± 0.3V.
Access time: 12ns (max).
Completely static memory ⎯ No clock or timing strobe required.
Equal access and cycle times.
Directly TTL compatible ⎯ All inputs and outputs.
Operating current: 100mA (max).
TTL standby current: 40mA (max).
CMOS standby current : 5mA (max) : 0.8mA (max) (L-version).
Data retention current : 0.4mA (max) (L-version).
Data retention voltage: 2.0V (min.

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Published: Oct 10, 2014 |