Datasheet4U Logo Datasheet4U.com

R1RW0404DGE-2PR - 4M High Speed SRAM

Download the R1RW0404DGE-2PR datasheet PDF. This datasheet also covers the R1RW0404D variant, as both devices belong to the same 4m high speed sram family and are provided as variant models within a single manufacturer datasheet.

Description

The R1RW0404D is a 4-Mbit high speed static RAM organized 1-Mword × 4-bit.

It has realized high speed access time by employing CMOS process (6-transistor memory cell) and high speed circuit designing technology.

Features

  • Single supply: 3.3 V ± 0.3 V.
  • Access time: 12 ns (max).
  • Completely static memory  No clock or timing strobe required.
  • Equal access and cycle times.
  • Directly TTL compatible  All inputs and outputs.
  • Operating current: 100 mA (max).
  • TTL standby current: 40 mA (max).
  • CMOS standby current : 5 mA (max) : 0.8 mA (max) (L-version).
  • Data retention current: 0.4 mA (max) (L-version).
  • Data retention voltage: 2 V (mi.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (R1RW0404D-Renesas.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer

Other Datasheets by Renesas

Part Number Description
R1RW0404DGE-2LR 4M High Speed SRAM
R1RW0404D 4M High Speed SRAM
R1RW0408D 4M High Speed SRAM
R1RW0408DGE-2LR 4M High Speed SRAM
R1RW0408DGE-2PI 4M High Speed SRAM

Full PDF Text Transcription

Click to expand full text
R1RW0404D Series 4M High Speed SRAM (1-Mword × 4-bit) REJ03C0115-0100Z Rev. 1.00 Mar.12.2004 Description The R1RW0404D is a 4-Mbit high speed static RAM organized 1-Mword × 4-bit. It has realized high speed access time by employing CMOS process (6-transistor memory cell) and high speed circuit designing technology. It is most appropriate for the application which requires high speed and high density memory, such as cache and buffer memory in system. The R1RW0404D is packaged in 400-mil 32-pin SOJ for high density surface mounting. Features • Single supply: 3.3 V ± 0.
Published: |