Datasheet4U Logo Datasheet4U.com

R1RW0408D - 4M High Speed SRAM

Description

The R1RW0408D is a 4-Mbit high speed static RAM organized 512-kword × 8-bit.

It has realized high speed access time by employing CMOS process (6-transistor memory cell) and high speed circuit designing technology.

Features

  • Single 3.3V supply: 3.3V ± 0.3V.
  • Access time: 12ns (max).
  • Completely static memory ⎯ No clock or timing strobe required.
  • Equal access and cycle times.
  • Directly TTL compatible ⎯ All inputs and outputs.
  • Operating current: 100mA (max).
  • TTL standby current: 40mA (max).
  • CMOS standby current : 5mA (max) : 0.8mA (max) (L-version).
  • Data retention current : 0.4mA (max) (L-version).
  • Data retention voltage: 2.0V (min.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer

Other Datasheets by Renesas

Part Number Description
R1RW0408DGE-2LR 4M High Speed SRAM
R1RW0408DGE-2PI 4M High Speed SRAM
R1RW0408DGE-2PR 4M High Speed SRAM
R1RW0408DI 4M High Speed SRAM
R1RW0404D 4M High Speed SRAM

Full PDF Text Transcription

Click to expand full text
R1RW0408D Series 4M High Speed SRAM (512-kword × 8-bit) Datasheet R10DS0286EJ0100 Rev.1.00 Nov.18.19 Description The R1RW0408D is a 4-Mbit high speed static RAM organized 512-kword × 8-bit. It has realized high speed access time by employing CMOS process (6-transistor memory cell) and high speed circuit designing technology. It is most appropriate for the application which requires high speed, high density memory and wide bit width configuration, such as cache and buffer memory in system. The R1RW0408D is packaged in 400-mil 36-pin SOJ for high density surface mounting. Features • Single 3.3V supply: 3.3V ± 0.
Published: |