R1RW0408DGE-2PR sram equivalent, 4m high speed sram.
* Single 3.3V supply: 3.3V ± 0.3V
* Access time: 12ns (max)
* Completely static memory
⎯ No clock or timing strobe required
* Equal access and cycle times.
The R1RW0408D is a 4-Mbit high speed static RAM organized 512-kword × 8-bit. It has realized high speed access time by employing CMOS process (6-transistor memory cell) and high speed circuit designing technology. It is most appropriate for the appli.
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