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R1RW0416DSB-0PR Datasheet, Renesas

R1RW0416DSB-0PR sram equivalent, 4m high speed sram.

R1RW0416DSB-0PR Avg. rating / M : 1.0 rating-11

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R1RW0416DSB-0PR Datasheet

Features and benefits


* Single 3.3V supply: 3.3V ± 0.3V
* Access time: 10ns / 12ns (max)
* Completely static memory ⎯ No clock or timing strobe required
* Equal access and cycl.

Description

The R1RW0416D is a 4-Mbit high speed static RAM organized 256-kword × 16-bit. It has realized high speed access time by employing CMOS process (6-transistor memory cell) and high speed circuit designing technology. It is most appropriate for the appl.

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TAGS

R1RW0416DSB-0PR
High
Speed
SRAM
Renesas

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