NP83P04PDG datasheet, mosfet equivalent, Renesas

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Features and benefits

* Super low on-state resistance : RDS(on) = 5.3 m Max. ( VGS = -10 V, ID = -41.5 A ) RDS(on) = 8.0 m Max. ( VGS = -4.5 V, ID = -41.5 A )
* Low input capacitance.

Application

Features
* Super low on-state resistance : RDS(on) = 5.3 m Max. ( VGS = -10 V, ID = -41.5 A ) RDS(on) = 8.0 m Max.

Description

This product is P-channel MOS Field Effect Transistor designed for high current switching applications. Features
* Super low on-state resistance : RDS(on) = 5.3 m Max. ( VGS = -10 V, ID = -41.5 A ) RDS(on) = 8.0 m Max. ( VGS = -4.5 V, ID = -41..

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