NP80N03NDE mosfet equivalent, switching n-channel power mosfet.
* Channel Temperature 175 degree rated
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* Super Low on-state Resistance RDS(on)1 = 7.0 mΩ MAX. (VGS = 10 V, ID = 40 A) (TO-262) RDS(on)3 = 11 .
These products are N-channel MOS Field Effect Transistors designed for high current switching applications.
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