Description
www.DataSheet4U.com
These products are N-channel MOS Field Effect Transistors designed for high current switching applications..
Features
- Channel temperature 175 degree rated.
- Super low on-state resistance RDS(on) = 8.0 mΩ MAX. (VGS = 10 V, ID = 40 A).
- Low input capacitance Ciss = 2200 pF TYP.
- Built-in gate protection diode (TO-262)
(TO-263)
The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all products and/or types are available in every country. Please check with an NEC Electronics sales re.
