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NP80N03DLE - SWITCHING N-CHANNEL POWER MOS FET

Download the NP80N03DLE datasheet PDF. This datasheet also covers the NP80N03CLE variant, as both devices belong to the same switching n-channel power mos fet family and are provided as variant models within a single manufacturer datasheet.

Description

These products are N-channel MOS Field Effect Transistor designed for high current switching applications.

Features

  • Channel Temperature 175 degree rated.
  • Super Low On-state Resistance RDS(on)1 = 7.0 mΩ MAX. (VGS = 10 V, ID = 40 A) RDS(on)2 = 9.0 mΩ MAX. (VGS = 5 V, ID = 40 A).
  • Low Ciss : Ciss = 2600 pF TYP.
  • Built-in Gate Protection Diode 5 NP80N03ELE NP80N03KLE (TO-220AB).

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (NP80N03CLE_NEC.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number NP80N03DLE
Manufacturer NEC
File Size 105.78 KB
Description SWITCHING N-CHANNEL POWER MOS FET
Datasheet download datasheet NP80N03DLE Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
www.DataSheet4U.com DATA SHEET MOS FIELD EFFECT TRANSISTOR NP80N03CLE,NP80N03DLE,NP80N03ELE NP80N03KLE SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION These products are N-channel MOS Field Effect Transistor designed for high current switching applications. ORDERING INFORMATION PART NUMBER NP80N03CLE NP80N03DLE PACKAGE TO-220AB TO-262 TO-263 (MP-25ZJ) TO-263 (MP-25ZK) FEATURES • Channel Temperature 175 degree rated • Super Low On-state Resistance RDS(on)1 = 7.0 mΩ MAX. (VGS = 10 V, ID = 40 A) RDS(on)2 = 9.0 mΩ MAX. (VGS = 5 V, ID = 40 A) • Low Ciss : Ciss = 2600 pF TYP.
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