NP82N06PDG fet equivalent, n-channel power mos fet.
* Super low on-state resistance RDS(on)1 = 6.7 mΩ MAX. (VGS = 10 V, ID = 41 A) RDS(on)2 = 8.5 mΩ MAX. (VGS = 5 V, ID = 41 A)
* Low Ciss Ciss = 5700 pF TYP.
ABSOL.
ORDERING INFORMATION
PART NUMBER NP82N06PDG-E1-AY Note NP82N06PDG-E2-AY Note
LEAD PLATING Pure Sn (Tin)
Note See “T.
The NP82N06PDG is N-channel MOS Field Effect Transistor designed for high current switching applications.
ORDERING INFORMATION
PART NUMBER NP82N06PDG-E1-AY Note NP82N06PDG-E2-AY Note
LEAD PLATING Pure Sn (Tin)
Note See “TAPE INFORMATION”
PACKING.
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