NP82N04MDG fet equivalent, n-channel power mos fet.
* Logic level
* Super low on-state resistance
RDS(on)1 = 4.2 mΩ MAX. (VGS = 10 V, ID = 41 A) RDS(on)2 = 8.5 mΩ MAX. (VGS = 4.5 V, ID = 41 A)
* High current ra.
ORDERING INFORMATION
PART NUMBER NP82N04MDG-S18-AY Note NP82N04NDG-S18-AY Note
LEAD PLATING Pure Sn (Tin)
PACKING T.
The NP82N04MDG and NP82N04NDG are N-channel MOS Field Effect Transistors designed for high current switching applications.
ORDERING INFORMATION
PART NUMBER NP82N04MDG-S18-AY Note NP82N04NDG-S18-AY Note
LEAD PLATING Pure Sn (Tin)
PACKING Tube
50 p.
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