* Super low on-state resistance RDS(on)1 = 3.5 mΩ MAX. (VGS = 10 V, ID = 41 A) RDS(on)2 = 8.0 mΩ MAX. (VGS = 4.5 V, ID = 41 A)
* Low Ciss Ciss = 6000 pF TYP. ABS.

ORDERING INFORMATION PART NUMBER LEAD PLATING NP82N04PDG-E1-AY Pure Sn (Tin) NP82N04PDG-E2-AY PACKING Tape 800 p.

The NP82N04PDG is N-channel MOS Field Effect Transistor designed for high current switching applications. ORDERING INFORMATION PART NUMBER LEAD PLATING NP82N04PDG-E1-AY Pure Sn (Tin) NP82N04PDG-E2-AY PACKING Tape 800 p/reel PACKAGE TO-263 (MP.

NP82N04PUG

NP82N04MDG

NP82N04MLG

NP82N04NDG

NP82N04NLG

NP82N03PUG

NP82N055CHE

NP82N055DHE

NP82N055EHE

NP82N055KHE

NP82N055MUG

NP82N055NUG

NP82N06PDG

Since 2006. D4U Semicon.   |   Contact Us   |   Privacy Policy   |   Purchase of parts