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NE85630 - NPN Silicon RF Transistor

Description

The NE85630 / 2SC4226 is a low supply voltage transistor designed for VHF, UHF low noise amplifier.

It is suitable for a high density surface mount assembly since the transistor has been applied 3-pin super minimold package.

Features

  • Low noise : NF = 1.2 dB TYP. @ VCE = 3 V, IC = 7 mA, f = 1 GHz.
  • High gain : ⏐S21e⏐2 = 9 dB TYP. @ VCE = 3 V, IC = 7 mA, f = 1 GHz.
  • 3-pin super minimold package.

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Datasheet Details

Part number NE85630
Manufacturer Renesas
File Size 1.37 MB
Description NPN Silicon RF Transistor
Datasheet download datasheet NE85630 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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A Business Partner of Renesas Electronics Corporation. Preliminary NE85630 / 2SC4226 JEITA Part No. Data Sheet NPN Silicon RF Transistor R09DS0022EJ0200 Rev.2.00 NPN Epitaxial Silicon RF Transistor for High-Frequency Low-Noise Amplification 3-pin super Minimold Jun 29, 2011 DESCRIPTION The NE85630 / 2SC4226 is a low supply voltage transistor designed for VHF, UHF low noise amplifier. It is suitable for a high density surface mount assembly since the transistor has been applied 3-pin super minimold package. FEATURES • Low noise : NF = 1.2 dB TYP. @ VCE = 3 V, IC = 7 mA, f = 1 GHz • High gain : ⏐S21e⏐2 = 9 dB TYP.
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