NE85630 transistor equivalent, npn silicon rf transistor.
* Low noise : NF = 1.2 dB TYP. @ VCE = 3 V, IC = 7 mA, f = 1 GHz
* High gain : ⏐S21e⏐2 = 9 dB TYP. @ VCE = 3 V, IC = 7 mA, f = 1 GHz
* 3-pin super minimold pa.
for each Renesas Electronics product depends on the product’s quality grade, as indicated below. “Standard”: Computers; .
The NE85630 / 2SC4226 is a low supply voltage transistor designed for VHF, UHF low noise amplifier. It is suitable for a high density surface mount assembly since the transistor has been applied 3-pin super minimold package.
FEATURES
* Low noise.
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