Datasheet4U Logo Datasheet4U.com

NE5550979A - Silicon Power LDMOS FET

Features

  • High Output Power : Pout = 39.5 dBm TYP. (VDS = 7.5 V, IDset = 200 mA, f = 460 MHz, Pin = 25 dBm).
  • High power added efficiency : ηadd = 66% TYP. (VDS = 7.5 V, IDset = 200 mA, f = 460 MHz, Pin = 25 dBm).
  • High Linear gain : GL = 22 dB TYP. (VDS = 7.5 V, IDset = 200 mA, f = 460 MHz, Pin = 10 dBm).
  • High ESD tolerance : ESD tolerance > 8 kV (IEC61000-4-2, Contact discharge).
  • Suitable for VHF to UHF-BAND Class-AB power amplifier.

📥 Download Datasheet

Datasheet Details

Part number NE5550979A
Manufacturer Renesas
File Size 802.93 KB
Description Silicon Power LDMOS FET
Datasheet download datasheet NE5550979A Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
NE555 CMOS GENERAL PURPOSE TIMER HTC
NE555 Precision Timer Texas Instruments
NE555 General-purpose single bipolar timer ST Microelectronics
NE555 Single Timer Fairchild
NE555 Precision Timer Diodes

Other Datasheets by Renesas

Part Number Description
NE5550234 Silicon Power MOSFET
NE5550279A Silicon Power LDMOS FET
NE5550779A Silicon Power LDMOS FET
NE5531079A 7.5V OPERATION SILICON RF POWER LDMOS FET
NE55410GR N-CHANNEL SILICON POWER LDMOS FET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Data Sheet NE5550979A Silicon Power LDMOS FET R09DS0031EJ0300 Rev.3.00 Mar 12, 2013 FEATURES • High Output Power : Pout = 39.5 dBm TYP. (VDS = 7.5 V, IDset = 200 mA, f = 460 MHz, Pin = 25 dBm) • High power added efficiency : ηadd = 66% TYP. (VDS = 7.5 V, IDset = 200 mA, f = 460 MHz, Pin = 25 dBm) • High Linear gain : GL = 22 dB TYP. (VDS = 7.5 V, IDset = 200 mA, f = 460 MHz, Pin = 10 dBm) • High ESD tolerance : ESD tolerance > 8 kV (IEC61000-4-2, Contact discharge) • Suitable for VHF to UHF-BAND Class-AB power amplifier.
Published: |