NE5531079A Description
The NE5531079A is an N-channel silicon power laterally diffused MOS FET specially designed as the transmission power amplifier for 7.5 V radio systems. Dies are manufactured using our NEWMOS-M1 technology and housed in a surface mount package. This device can deliver 40.0 dBm output power with 68% power added efficiency at 460 MHz under the 7.5 V supply voltage.
NE5531079A Key Features
- High output power
- High power added efficiency : ηadd = 68% TYP. (VDS = 7.5 V, IDset = 200 mA, f = 460 MHz, Pin = 25 dBm)
- High linear gain
- Surface mount package
- Single supply