• Part: NE5550779A
  • Description: Silicon Power LDMOS FET
  • Manufacturer: Renesas
  • Size: 3.15 MB
Download NE5550779A Datasheet PDF
Renesas
NE5550779A
FEATURES - High Output Power : Pout = 38.5 d Bm TYP. (VDS = 7.5 V, IDset = 140 m A, f = 460 MHz, Pin = 25 d Bm) - High power added efficiency : ηadd = 66% TYP. (VDS = 7.5 V, IDset = 140 m A, f = 460 MHz, Pin = 25 d Bm) - High Linear gain : GL = 22.0 d B TYP. (VDS = 7.5 V, IDset = 140 m A, f = 460 MHz, Pin = 10 d Bm) - High ESD tolerance - Suitable for VHF to UHF-BAND Class-AB power amplifier. APPLICATIONS - 150 MHz Band Radio System - 460 MHz Band Radio System - 900 MHz Band Radio System ORDERING INFORMATION Part Number NE5550779A Order Number NE5550779A-A Package 79A (Pb-Free) Marking W8 Supplying Form - 12 mm wide embossed taping - Gate pin faces the perforation side of the tape NE5550779A-T1 NE5550779A-T1-A - 12 mm wide embossed taping - Gate pin faces the perforation side of the tape - Qty 1 kpcs/reel NE5550779A-T1A NE5550779A-T1A-A - 12 mm wide embossed taping - Gate pin faces the perforation side of the tape - Qty 5 kpcs/reel Remark To order evaluation samples,...