* Super low on-state resistance: RDS(on) = 8.5 mΩ MAX. (VGS = 10 V, ID = 42 A)
* Low Ciss: Ciss = 8500 pF TYP.
* Built-in gate protection diode 2SK3510-S TO.

ORDERING INFORMATION PART NUMBER PACKAGE 2SK3510 TO-220AB FEATURES
* Super low on-state resistance: RDS(on) =.

The 2SK3510 is N-channel MOS Field Effect Transistor designed for high current switching applications. ORDERING INFORMATION PART NUMBER PACKAGE 2SK3510 TO-220AB FEATURES
* Super low on-state resistance: RDS(on) = 8.5 mΩ MAX. (VGS = 10 V, ID.

K3511

K3515-01MR

K3518

K3519PQ-XH

K350

K3500G

K3502-01MR

K3503FC450

K3503FC460

K3503FC480

K3503FC500

K3503FC520

K3503FT450

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