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K3519PQ-XH Datasheet, KEC

K3519PQ-XH transistor equivalent, common-drain dual n-channel enhancement mode field effect transistor.

K3519PQ-XH Avg. rating / M : 1.0 rating-11

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K3519PQ-XH Datasheet

Features and benefits

¡⁄ Low on-state resistance RDS(ON)1 = 16m¥ MAX (VGS=4.5V, IS=1.0A) RDS(ON)2 = 17m¥ MAX (VGS=3.9V, IS=1.0A) RDS(ON)3 = 20m¥ MAX (VGS=3.5V, IS=1.0A) S1 S2 1080 G1 G2 .

Description

The K3519PQ-XH is a Dual N-channel MOSFET designed for use as a bi-directional load switch, facilitated by its common-drain configuration. K3519PQ-XH www.DataSheet4U.com Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor 2000 F.

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K3519PQ-XH Page 1 K3519PQ-XH Page 2 K3519PQ-XH Page 3

TAGS

K3519PQ-XH
Common-Drain
Dual
N-Channel
Enhancement
Mode
Field
Effect
Transistor
K3510
K3511
K3515-01MR
KEC

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