K3519PQ-XH transistor equivalent, common-drain dual n-channel enhancement mode field effect transistor.
¡⁄ Low on-state resistance RDS(ON)1 = 16m¥ MAX (VGS=4.5V, IS=1.0A) RDS(ON)2 = 17m¥ MAX (VGS=3.9V, IS=1.0A) RDS(ON)3 = 20m¥ MAX (VGS=3.5V, IS=1.0A)
S1
S2
1080
G1
G2
.
The K3519PQ-XH is a Dual N-channel MOSFET designed for use as a bi-directional load switch, facilitated by its common-drain configuration.
K3519PQ-XH
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Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor
2000
F.
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