K3511 transistor equivalent, mos field effect transistor.
Super low on-state resistance: RDS(on) = 12.5 m MAX. (VGS = 10 V, ID = 42 A)
+0.2 8.7-0.2
Low Ciss: Ciss = 5900 pF TYP. Built-in gate protection diode
+0.1 1.27-0.1
0.
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