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H7N0308CF - Silicon N-Channel MOSFET

Features

  • Low on-resistance RDS (on) = 3.8 mΩ typ.
  • Low drive current.
  • 4.5 V gate drive device can be driven from 5 V source Outline.

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Full PDF Text Transcription

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H7N0308CF Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS (on) = 3.8 mΩ typ. • Low drive current • 4.5 V gate drive device can be driven from 5 V source Outline RENESAS Package code: PRSS0003AE-A (Package name: TO-220C•FM) D G 123 S REJ03G1123-0300 (Previous: ADE-208-1570A) Rev.3.00 Sep 07, 2005 1. Gate 2. Drain 3. Source Rev.3.00 Sep 07, 2005 page 1 of 3 H7N0308CF Absolute Maximum Ratings Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Channel dissipation Channel to case thermal impedance Channel to ambient thermal impedance Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2.
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