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H7N0307LS - Silicon N-Channel MOSFET

Download the H7N0307LS datasheet PDF. This datasheet also covers the H7N0307L variant, as both devices belong to the same silicon n-channel mosfet family and are provided as variant models within a single manufacturer datasheet.

Features

  • Low on-resistance RDS(on) =4.6 mΩ typ.
  • Low drive current.
  • 4.5 V gate drive device can be driven from 5 V source Outline LDPAK D G S 4 44 1 2 3 1 2 3 H7N0307LS 1 2 3 H7N0307LM H7N0307LD 1. Gate 2. Drain 3. Source 4. Drain H7N0307LD, H7N0307LS, H7N0307LM Absolute Maximum Ratings (Ta = 25°C) Item Symbol Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Channel dissipation V DSS V GSS.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (H7N0307L_Hitachi.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
H7N0307LS Silicon N-Channel MOSFET Renesas
H7N0307LD Silicon N-Channel MOSFET Renesas
H7N0307LM Silicon N-Channel MOSFET Renesas
H7N0307AB Silicon N-Channel MOSFET Renesas
H7N0308AB Silicon N-Channel MOSFET Renesas Technology

Other Datasheets by Hitachi Semiconductor (now Renesas)

Part Number Description
H7N0307L Silicon N-Channel MOSFET
H7N0307LD Silicon N-Channel MOSFET
H7N0307LM Silicon N-Channel MOSFET
H7N0307AB Silicon N-Channel MOSFET

Full PDF Text Transcription

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H7N0307LD, H7N0307LS, H7N0307LM Silicon N Channel MOS FET High Speed Power Switching ADE-208-1516D (Z) 5th. Edition May 2002 Features • Low on-resistance RDS(on) =4.6 mΩ typ. • Low drive current • 4.5 V gate drive device can be driven from 5 V source Outline LDPAK D G S 4 44 1 2 3 1 2 3 H7N0307LS 1 2 3 H7N0307LM H7N0307LD 1. Gate 2. Drain 3. Source 4. Drain H7N0307LD, H7N0307LS, H7N0307LM Absolute Maximum Ratings (Ta = 25°C) Item Symbol Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Channel dissipation V DSS V GSS ID I Note 1 D(pulse) I DR Pch Note 2 Channel to Case Thermal Impedance θch-c Channel to Ambient Thermal Impedance θch-a Channel temperature Tch Storage temperature Tstg Notes: 1.
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