Datasheet4U Logo Datasheet4U.com

H7N0203AB - Silicon N-Channel MOSFET

Features

  • Low on-resistance RDS (on) =2.4 mΩ typ.
  • Low drive current.
  • 4.5 V gate drive device can be driven from 5 V source Outline.

📥 Download Datasheet

📁 Similar Datasheet

  • H7N0307AB - Silicon N-Channel MOSFET (Hitachi)
  • H7N0307L - Silicon N-Channel MOSFET (Hitachi)
  • H7N0307LD - Silicon N-Channel MOSFET (Hitachi)
  • H7N0307LM - Silicon N-Channel MOSFET (Hitachi)
  • H7N0307LS - Silicon N-Channel MOSFET (Hitachi)
  • H7N0308AB - Silicon N-Channel MOSFET (Renesas Technology)
  • H7N0308CF - Silicon N-Channel MOSFET (Hitachi Semiconductor)
  • H7N0308LD - Silicon N-Channel MOSFET (Renesas Technology)
  • H7N0308LM - Silicon N-Channel MOSFET (Renesas Technology)
  • H7N0308LS - Silicon N-Channel MOSFET (Renesas Technology)
Other Datasheets by Renesas

Full PDF Text Transcription

Click to expand full text
H7N0203AB Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS (on) =2.4 mΩ typ. • Low drive current • 4.5 V gate drive device can be driven from 5 V source Outline RENESAS Package code: PRSS0004AC-A (Package name: TO-220AB) D 123 G S REJ03G1119-0500 (Previous: ADE-208-1490C) Rev.5.00 Sep 07, 2005 1. Gate 2. Drain (Flange) 3. Source Rev.5.00 Sep 07, 2005 page 1 of 7 H7N0203AB Absolute Maximum Ratings Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel to case thermal impedance Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at Tch = 25°C, Rg ≥ 50 Ω 3.
Published: |