2SJ358C switching equivalent, p-channel mosfet for switching.
* Directly driven by a 4.0 V power source.
* Low on-state resistance RDS(on)1 = 143 m ī MAX. (VGS = -10 V, ID = -2.0 A) RDS(on)2 = 179 mī MAX. (VGS = -4.5 V, ID =.
for each Renesas Electronics product depends on the product's quality grade, as indicated below. "Standard": Computers; .
The 2SJ358C, P-channel vertical type MOSFET designed for general-purpose switch, is a device which can be driven directly by a 4.0 V power source.
Features
* Directly driven by a 4.0 V power source.
* Low on-state resistance RDS(on)1 = 143 m.
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