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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SJ353
P-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING
The 2SJ353 is a P-channel MOS FET of a vertical type and is a switching element that can be directly driven by the output of an IC operating at 5 V. This product has a low ON resistance and superb switching converters. characteristics and is ideal for driving the actuators and DC/DC
PACKAGE DIMENSIONS (in mm)
7.0 MAX. 2.0 1.2 9.0 MAX. 0.55 ±0.1 4.0 MAX. 12.0 MIN.
0.8 ±0.1 0.6 ±0.1
FEATURES
• Radial taping supported • Can be directly driven by output of 5-V IC • Low ON resistance RDS(on) = 0.68 Ω MAX. @VGS = –4 V, ID = –0.8 A RDS(on) = 0.37 Ω MAX. @VGS = –10 V, ID = –1.0 A
0.6 ±0.1 0.6 ±0.1 1.7 1.7
GD S
EQUIVALENT CIRCUIT
Drain (D)
1.5
Gate (G) Gate protection diode Source (S)
3.0 MAX.
2SJ353 Datasheet
