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2SJ351 - P-Channel MOSFET

Features

  • High power gain Excellent frequency response High speed switching Wide area of safe operation Enhancement-mode Good complementary characteristics Equipped with gate protection diodes Ordering Information Type No. 2SJ351 2SJ352 VDSX.
  • 180 V.
  • 200 V 2SJ351, 2SJ352 Outline TO-3P D G 1 2 3 1. Gate 2. Source (Flange) 3. Drain S Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage 2SJ351 2SJ352 Gate.

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2SJ351, 2SJ352 Silicon P-Channel MOS FET ADE-208-143 1st. Edition Application Low frequency power amplifier Complementary pair with 2SK2220, 2SK2221 Features • • • • • • • High power gain Excellent frequency response High speed switching Wide area of safe operation Enhancement-mode Good complementary characteristics Equipped with gate protection diodes Ordering Information Type No. 2SJ351 2SJ352 VDSX –180 V –200 V 2SJ351, 2SJ352 Outline TO-3P D G 1 2 3 1. Gate 2. Source (Flange) 3. Drain S Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage 2SJ351 2SJ352 Gate to source voltage Drain current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Note: 1.
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