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Rohm Semiconductor Electronic Components Datasheet

100N10 Datasheet

Nch 100V 10A Power MOSFET

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RSD100N10FRA
   Nch 100V 10A Power MOSFET
   Datasheet
VDSS
RDS(on)(Max.)
ID
PD
100V
133mΩ
±10A
20W
lFeatures
1) Low on-resistance
2) Fast switching speed
3) Drive circuits can be simple
4) Parallel use is easy
5) Pb-free lead plating ; RoHS compliant
6) AEC-Q101 Qualified
lOutline
TO-252
SC-63
CPT3
 
      
lInner circuit
 
lPackaging specifications
Packing
Embossed
Tape
Reel size (mm)
330
lApplication
Switching
Type Tape width (mm)
Basic ordering unit (pcs)
16
2500
Taping code
TL
Marking
lAbsolute maximum ratings (Ta = 25°C ,unless otherwise specified)
100N10
Parameter
Symbol
Value
Unit
Drain - Source voltage
VDSS
100 V
Continuous drain current
ID*1 ±10 A
Pulsed drain current
IDP*2 ±20 A
Gate - Source voltage
VGSS
±20 V
Power dissipation
PD*3 20 W
Junction temperature
Tj 150
Operating junction and storage temperature range
Tstg
-55 to +150
                                              
                                                                                        
www.rohm.com
© 2017 ROHM Co., Ltd. All rights reserved.
1/11
20170706 - Rev.001    


Rohm Semiconductor Electronic Components Datasheet

100N10 Datasheet

Nch 100V 10A Power MOSFET

No Preview Available !

RSD100N10FRA
          
lThermal resistance
Parameter
Thermal resistance, junction - case
                Datasheet
                    
Symbol
RthJC*3
Values
Min. Typ. Max.
- - 6.25
Unit
/W
lElectrical characteristics (Ta = 25°C)
Parameter
Symbol
Conditions
Drain - Source breakdown
voltage
V(BR)DSS VGS = 0V, ID = 1mA
Breakdown voltage
temperature coefficient
 ΔV(BR)DSS  ID = 1mA
   ΔTj     referenced to 25
Zero gate voltage
drain current
IDSS VDS = 100V, VGS = 0V
Gate - Source leakage current IGSS VGS = ±20V, VDS = 0V
Gate threshold voltage
Gate threshold voltage
temperature coefficient
VGS(th) VDS = 10V , ID = 1mA
 ΔVGS(th)   ID = 1mA
   ΔTj     referenced to 25
Static drain - source
on - state resistance
VGS = 10V, ID = 5A
RDS(on)*4 VGS = 4.5V, ID = 5A
VGS = 4V, ID = 5A
Gate resistance
RG f = 1MHz, open drain
Forward Transfer
Admittance
|Yfs|*4 VDS = 10V, ID = 5A
Values
Unit
Min. Typ. Max.
100 - - V
- 116.9 - mV/
- - 1 μA
- - ±10 μA
1.0 - 2.5 V
- -3.6 - mV/
- 95 133
- 100 140 mΩ
- 105 147
- 6.3 -
Ω
4.5 - - S
*1 Limited only by maximum temperature allowed.
*2 Pw10μs , Duty cycle1%
*3 TC=25
*4 Pulsed
                                             
www.rohm.com
© 2017 ROHM Co., Ltd. All rights reserved.
2/11
                                          
20170706 - Rev.001


Part Number 100N10
Description Nch 100V 10A Power MOSFET
Maker ROHM
PDF Download

100N10 Datasheet PDF






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