100N10 - N-Channel PowerTrench MOSFET

Datasheet Details

Part number	100N10
Manufacturer	Unknown Manufacturer
File Size	848.07 KB
Description	N-Channel PowerTrench MOSFET
Datasheet	100N10 Datasheet

General Description

This N-Channel MOSFET is producedusing Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.

D G DS TO-220 G S MOSFET Maximum Ratings TC = 25oC unless otherwise noted* Symbol VDSS VGSS ID IDM EAS dv/dt PD Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Drain Current -Continuous (TC = 75oC) - Pulsed Single Pulsed Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TC = 25oC) - Derate above 25oC TJ, TSTG TL Operating and Storage Temperature Range Maximum

Overview

100N10 100N10 N-Channel PowerTrench® MOSFET 100V, 75A, 10mΩ.

Key Features

RDS(on) = 8.2mΩ ( Typ. )@ VGS = 10V, ID = 75A.
Fast switching speed.
Low gate charge.
High performance trench technology for extremely low RDS(on).
High power and current handing capability.
RoHS compliant.

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