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100N10B - Power MOSFET

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ON Semiconductor

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100N10B Power MOSFET by ON Semiconductor - Datasheet Preview — Datasheet preview – 100N10B

Datasheet Details

Part number	100N10B
Manufacturer	ON Semiconductor
File Size	646.77 KB
Description	Power MOSFET
Datasheet	100N10B Datasheet
Additional preview pages of the 100N10B datasheet.

Product details

Features

Low On-Resistance.
Low Gate Charge.
High Speed Switching.
100% Avalanche Tested.
Pb-Free and RoHS Compliance Specifications Absolute Maximum Ratings at Ta = 25°C VDSS 100V RDS(on) Max 7.2 mΩ@15V 8.7 mΩ@10V ID Max 100A Electrical Connection N-Channel 2 Parameter Drain to Source Voltage Gate to Source Voltage Drain Current (DC) Drain Current (Pulse) PW≤10μs, duty cycle≤1% Power Dissipation Tc=25°C Junction Temperature Storage Temperature Source Cu.

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Published: Nov 9, 2018 |