Datasheet Details
| Part number | SZM-2066Z |
|---|---|
| Manufacturer | RF Micro Devices (now Qorvo) |
| File Size | 614.21 KB |
| Description | 2W POWER AMPLIFIER |
| Datasheet |
 SZM-2066Z Datasheet
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General Description
(HBT) amplifier housed in a low-cost surface-mountable plastic Q-FlexN multi-chip module package.
Key Features
- an output power Optimum Technology detector, on/off power control and high RF overdrive robustMatching® Applied ness. A 20dB step attenuator feature can be utilized by switch- GaAs HBT ing the second stage Power up/down control. GaAs MESFET.
- InGaP HBT Vcc = 5V SiGe BiCMOS Si BiCMOS SiGe HBT GaAs pHEMT Si CMOS RFIN RFOUT Si BJT GaN HEMT Vbias = 5V Stage 1 Bias Stage 2 Bias Stage 3 Bias InP HBT RF MEMS LDMOS Pow er Up/Dow n Control Pow er Detector Features.
- P1dB=.