an output power Optimum Technology detector, on/off power control and high RF overdrive robustMatching® Applied ness. A 20dB step attenuator feature can be utilized by s.

or over narrower bands. It features an output power Optimum Technology detector, on/off power control and high RF overd.

RFMD’s SZM-2066Z is a high linearity class AB Heterojunction Bipolar Transistor (HBT) amplifier housed in a low-cost surface-mountable plastic Q-FlexN multi-chip module package. This HBT amplifier is made with InGaP on GaAs device technology and fa.

Since 2006. D4U Semicon.   |   Contact Us   |   Privacy Policy   |   Purchase of parts