an output power detector, on/off power control and high RF overdrive robustness. A 20dB step attenuator feature can be utilized by switching the second stage Power up/dow.

or over narrower bands. It features an output power detector, on/off power control and high RF overdrive robustness. A 2.

RFMD’s SZM-3066Z is a high linearity class AB Heterojunction Bipolar Transistor (HBT) amplifier housed in a low-cost surface-mountable plastic Q-FlexN multi-chip module package. This HBT amplifier is made with InGaP on GaAs device technology and fabr.

SZM-3166Z

SZM-01T-P0.7

SZM-2066Z

SZM-2166Z

SZM-41T-P0.7

SZM-5066Z

SZMD03C

SZMD05C

SZMD12C

SZMD15C

SZMD24C

SZMM3Z10VT1G

SZMM3Z11VT1G

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