Datasheet Details
| Part number | SZM-3066Z |
|---|---|
| Manufacturer | RF Micro Devices |
| File Size | 437.36 KB |
| Description | 2W POWER AMPLIFIER |
| Datasheet |
 SZM-3066Z Datasheet
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Description
RFMD’s SZM-3066Z is a high linearity class AB Heterojunction Bipolar Transistor (HBT) amplifier housed in a low-cost surface-mountable plastic Q-FlexN multi-chip module package.
Features
- an output power detector, on/off power control and high RF overdrive robustness. A 20dB step attenuator feature can be utilized by switching the second stage Power up/down control. This product features a RoHS compliant and Green package with matte tin finish, designated by the ‘Z’ suffix. Optimum Technology Matching® Applied GaAs HBT GaAs MESFET.
- InGaP HBT SiGe BiCMOS Si BiCMOS SiGe HBT GaAs pHEMT Si CMOS Si BJT GaN HEMT RF MEMS Features.
- P1dB=33.5dBm at 5V.
- Three Stages of.