SZM-3066Z Datasheet PDF - Sirenza 2W Power AMplifier Specs

SZM-3066Z - 2W Power AMplifier

Datasheet Summary

Description

Sirenza Microdevices’ SZM-3066Z is a high linearity class AB Heterojunction Bipolar Transistor (HBT) amplifier housed in a low-cost surface-mountable plastic Q-FlexN multi-chip module package.

Features

an output power detector, on/ off power control and high RF overdrive robustness. This product features a RoHS compliant and Green package with matte tin finish, designated by the ‘Z’ suffix. SZM-3066Z 3.3-3.8GHz 2W Power Amplifier RoHS Compliant & Green Package Pb 6mm x 6mm QFN Package Functional Block Diagram Vcc = 5V.
Product Features P1dB =33.5dBm @ 5V Three Stages of Gain: 34dB 802.11g 54Mb/s Class AB Performance Pout = 26dBm @ 2.5% EVM, Vcc 5V,730mA RFIN.

Datasheet Details

Part number	SZM-3066Z
Manufacturer	Sirenza
File Size	694.95 KB
Description	2W Power AMplifier
Datasheet	SZM-3066Z Datasheet
Additional preview pages of the SZM-3066Z datasheet.

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Full PDF Text Transcription

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www.DataSheet4U.com Preliminary Product Description Sirenza Microdevices’ SZM-3066Z is a high linearity class AB Heterojunction Bipolar Transistor (HBT) amplifier housed in a low-cost surface-mountable plastic Q-FlexN multi-chip module package. This HBT amplifier is made with InGaP on GaAs device technology and fabricated with MOCVD for an ideal combination of low cost and high reliability. This product is specifically designed as a final or driver stage for 802.16 equipment in the 3.3-3.8 GHz bands. It can run from a 3V to 6V supply. The external output match and bias adjustability allows load line optimization for other applications or over narrower bands. It features an output power detector, on/ off power control and high RF overdrive robustness.

Published: Jul 20, 2006 |