SZM-2166Z datasheet, amplifier equivalent, RF Micro Devices

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Features and benefits

an output power detector, on/off power control, and high RF overdrive robustness. A 20dB step attenuator feature can be utilized by switching the second stage Power up/do.

Application

over narrower bands. It features an output power detector, on/off power control, and high RF overdrive robustness. A 20d.

Description

RFMD’s SZM-2166Z is a high linearity class AB Heterojunction Bipolar Transistor (HBT) amplifier housed in a low-cost surface-mountable plastic Q-FlexN multi-chip module package. This HBT amplifier is made with InGaP on GaAs device technology and fabr.

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