Datasheet Details
| Part number | SZM-2166Z |
|---|---|
| Manufacturer | RF Micro Devices (now Qorvo) |
| File Size | 660.55 KB |
| Description | 2W POWER AMPLIFIER |
| Datasheet |
 SZM-2166Z Datasheet
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General Description
RFMD’s SZM-2166Z is a high linearity class AB Heterojunction Bipolar Transistor (HBT) amplifier housed in a low-cost surface-mountable plastic Q-FlexN multi-chip module package.
Key Features
- an output power detector, on/off power control, and high RF overdrive robustness. A 20dB step attenuator feature can be utilized by switching the second stage Power up/down control. This product features a RoHS compliant and Green package with matte finish, designated by the “Z” suffix Optimum Technology Matching® Applied GaAs HBT GaAs MESFET.
- InGaP HBT SiGe BiCMOS Si BiCMOS SiGe HBT GaAs pHEMT Si CMOS Si BJT GaN HEMT RF MEMS Vcc = 5V RFIN Vbias = 5V Stage 1 Bias Pow er Up/Dow n C.