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RCR1540ESJ - P-Channel Enhancement Mode Field Effect Transistor

Description

The RCR1540ESJ uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V.

This device is suitable for use as a load switch or in PWM applications.

Features

  • z Pin Configurations 40ESJ VDS (V) = -20V,ID = -4A RDS(ON).

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Datasheet Details

Part number RCR1540ESJ
Manufacturer RCR
File Size 694.66 KB
Description P-Channel Enhancement Mode Field Effect Transistor
Datasheet download datasheet RCR1540ESJ Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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® RCR15 P-Channel Enhancement Mode Field Effect Transistor z Features z Pin Configurations 40ESJ VDS (V) = -20V,ID = -4A RDS(ON)<55mΩ @ VGS= -4.5V RDS(ON)<63mΩ @ VGS= -2.5V RDS(ON)<83mΩ @ VGS= -1.8V SOT23-3L Package ESD Protected:3000V HBM z General Description The RCR1540ESJ uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM applications. z Package Information z Absolute Maximum Ratings @TA=25℃ unless otherwise noted Parameter Sy mbol VDS VGS Ratings -20 ±8 Unit V V Drain-Source Voltage Gate-Source Voltage 1/5 YKKJPD-V3.1 http://www.Datasheet4U.
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