RCR1540ESJ transistor equivalent, p-channel enhancement mode field effect transistor.
z Pin Configurations
40ESJ
VDS (V) = -20V,ID = -4A RDS(ON)<55mΩ @ VGS= -4.5V RDS(ON)<63mΩ @ VGS= -2.5V RDS(ON)<83mΩ @ VGS= -1.8V SOT23-3L Package ESD Protected:3000V HB.
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Package Information
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Absolute Maximum Ratings @TA=25℃ unless otherwise noted
Parameter Sy mbol VDS VGS Ratings -.
The RCR1540ESJ uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM applications.
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Package Information
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Absolu.
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