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RCR1515SI - N-Channel Enhancement Mode MOSFET

Description

The RCR1515SI uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V.

This device is suitable for use as a load switch or in PWM applications.

Features

  • 20V/5.1A RDS(ON) = 28mΩ @ VGS = 4.5V RDS(ON) = 38mΩ @ VGS = 2.5V RDS(ON) = 60mΩ @ VGS = 1.8V SOT23 Package z Pin Configurations See Diagram below (top view) z General.

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Datasheet Details

Part number RCR1515SI
Manufacturer RCR
File Size 337.95 KB
Description N-Channel Enhancement Mode MOSFET
Datasheet download datasheet RCR1515SI Datasheet

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Full PDF Text Transcription

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RCR1515SI N-Channel Enhancement Mode Field Effect Transistor z Features 20V/5.1A RDS(ON) = 28mΩ @ VGS = 4.5V RDS(ON) = 38mΩ @ VGS = 2.5V RDS(ON) = 60mΩ @ VGS = 1.8V SOT23 Package z Pin Configurations See Diagram below (top view) z General Description The RCR1515SI uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM applications. z Package Information ③ ①② SOT23 Unit:mm z Absolute Maximum Ratings @TA=25℃ unless otherwise noted Parameter Symbol Drain-Source Voltage VDSS Gate-Source Voltage VGSS Drain Current (Continuous) TA=25°C TA=70°C ID Ratings 20 ±12 5.
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