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RCR1514ESH - N-Channel Enhancement Mode Field Effect Transistor

Features

  • Low On-Resistance Pin Configurations ①:G.
  • Fast Switching Speed ②:S.
  • Low-voltage drive.
  • Easily designed drive circuits.
  • ESD Protected ③:D Package Information Absolute Maximum Ratings @TA=25℃ unless otherwise noted Parameter Symbol Drain-Source Voltage VDSS Gate-Source Voltage VGSS YKKJPD-V3.1 Ratings 60 ±20 Unit V V 1 /4 Drain Current (Continuous) TA=25°C Drain Current (Pulse) Power Dissipation TA=25°C Operating Temperature/ Storage Temperature.
  • 1 P.

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Datasheet Details

Part number RCR1514ESH
Manufacturer RCR
File Size 603.09 KB
Description N-Channel Enhancement Mode Field Effect Transistor
Datasheet download datasheet RCR1514ESH Datasheet

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Full PDF Text Transcription

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N-Channel Enhancement Mode Field Effect Transistor RCR1514ESH Features ·Low On-Resistance Pin Configurations ①:G ·Fast Switching Speed ②:S ·Low-voltage drive ·Easily designed drive circuits ·ESD Protected ③:D Package Information Absolute Maximum Ratings @TA=25℃ unless otherwise noted Parameter Symbol Drain-Source Voltage VDSS Gate-Source Voltage VGSS YKKJPD-V3.1 Ratings 60 ±20 Unit V V 1 /4 Drain Current (Continuous) TA=25°C Drain Current (Pulse) Power Dissipation TA=25°C Operating Temperature/ Storage Temperature *1 Pw ≦10 μs, Duty cycle ≦1 % *2 When mounted on a 1*0.75*0.
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